
|
project |
parameter |
|
Wafer size |
6”-12” |
|
Etching material |
Si, SiC, GaAs, GaN4, etc. can be customized |
|
production capacity |
> 38PCS (180s per run) |
|
Process index |
UPTIME>95%, MTTR< 4H , Particle added value <20ea@0.2um 8” Bare |